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ASCENT-T1 – Vertical CMOS 1
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ASCENT-T4 – Merged Logic Memory ... 1
1 through 3 of 3 similar documents, best matches first.   
1: Hybrid Charge Trap Transistor-MRAM Memory Devices (Patent P1951...
Hybrid Charge Trap Transistor-MRAM Memory Devices Application Type: Utility Patent Number: 11328757 Country: United States Status: Filed on 23-Oct-2020, Issued on 10-May-2022 ...
URL: https://www.src.org/library/patent/p1951/
Modified: 2022-05-10 - 25KB
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2: Ferroelectric Circuit for Non-Volatile High-Performance Memory...
Ferroelectric Circuit for Non-Volatile High-Performance Memory Application Type: Utility Country: United States Status: Filed on 8-Dec-2022, Published by Patent Office ...
URL: https://www.src.org/library/patent/p2054/
Modified: 2022-12-08 - 23KB
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3: Non-Volatile Multi-Level Cell Memory using a Ferroelectric Superlattic...
Non-Volatile Multi-Level Cell Memory using a Ferroelectric Superlattice and Related Systems Application Type: Utility Patent Number: 11532355 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p1942/
Modified: 2022-12-20 - 23KB
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