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GRC Science Area
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TechCAD – Technology CAD
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4 similar documents, best matches first. |
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- 1:
Method of Fabricating a Self-Aligned High Speed MOSFET Device...
- Method of Fabricating a Self-Aligned High Speed MOSFET Device Application Type: Continuation (in part) Patent Number: 5599728 Country: United States Status: Filed on 28-Oct-1994, ...
URL: https://www.src.org/library/patent/p0006/
Modified: 1997-02-04 - 22KB
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- 2:
Dynamic Threshold Voltage Mosfet Having Gate to Body Connection...
- Dynamic Threshold Voltage Mosfet Having Gate to Body Connection for Ultra-Low Voltage Operation Application Type: Utility Patent Number: 5559368 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0004/
Modified: 1996-09-24 - 22KB
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- 3:
Silicon-on-insulator transistors having improved current characteristi...
- Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility Application Type: Divisional Patent Number: 5982003 ...
URL: https://www.src.org/library/patent/p0002/
Modified: 1999-11-09 - 22KB
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- 4:
Silicon-On-Insulator Transistors Having Improved Current Characteristi...
- Silicon-On-Insulator Transistors Having Improved Current Characteristics and Reduced Electrostatic Discharge Susceptibility Application Type: Utility Patent Number: 6121077 ...
URL: https://www.src.org/library/patent/p0191/
Modified: 2000-09-19 - 21KB
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