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- 1: Memory Device Based on Gate Controlled Ferromagnetism and Spin...
- Memory Device Based on Gate Controlled Ferromagnetism and Spin-Polarized Current Injection Application Type: Utility Patent Number: 9741416 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1609/
Modified: 2017-08-22 - 22KB
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