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| 1 through 14 of
14 similar documents, best matches first. |
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- 1:
Memory Device Based on Gate Controlled Ferromagnetism and Spin...
- Memory Device Based on Gate Controlled Ferromagnetism and Spin-Polarized Current Injection Application Type: Utility Patent Number: 9741416 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1609/
Modified: 2017-08-22 - 22KB
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- 2:
Extremely Large Spin Hall Angle in Topological Insulator pn Junction...
- Extremely Large Spin Hall Angle in Topological Insulator pn Junction Application Type: Utility Patent Number: 9865713 Country: United States Status: Filed on 30-Sep-2015, Issued on ...
URL: https://www.src.org/library/patent/p1545/
Modified: 2018-01-09 - 23KB
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- 3:
Magneto-Electric Voltage Controlled Spin Transistors (Patent...
- Magneto-Electric Voltage Controlled Spin Transistors Application Type: Utility Patent Number: 9379232 Country: United States Status: Filed on 18-Feb-2014, Issued on 28-Jun-2016 ...
URL: https://www.src.org/library/patent/p1469/
Modified: 2016-06-28 - 27KB
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- 4:
Bi-Layer Pseudo-Spin-Field-Effect Transistor (Patent P1174) ...
- Bi-Layer Pseudo-Spin-Field-Effect Transistor Application Type: Utility Patent Number: 8188460 Country: United States Status: Filed on 24-Nov-2009, Issued on 29-May-2012, Patent ...
URL: https://www.src.org/library/patent/p1174/
Modified: 2012-05-29 - 23KB
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- 5:
Bi-layer Pseudo-Spin Field-Effect Transistor (Patent P1347) ...
- Bi-layer Pseudo-Spin Field-Effect Transistor Application Type: Divisional Patent Number: 8263967 Country: United States Status: Filed on 1-May-2012, Issued on 11-Sep-2012, Patent ...
URL: https://www.src.org/library/patent/p1347/
Modified: 2012-09-11 - 23KB
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- 6:
Spin Transistor Having Multiferroic Gate Dielectric (Patent P1282...
- Spin Transistor Having Multiferroic Gate Dielectric Application Type: Utility Patent Number: 8860006 Country: United States Status: Filed on 25-Mar-2011, Issued on 14-Oct-2014, ...
URL: https://www.src.org/library/patent/p1282/
Modified: 2014-10-14 - 23KB
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- 7:
Magneto-Electric Logic Devices Using Semiconductor Channel with...
- Magneto-Electric Logic Devices Using Semiconductor Channel with Large Spin-Orbit Coupling Application Type: Utility Patent Number: 10361292 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1758/
Modified: 2019-07-23 - 25KB
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- 8:
Magnetoelectric Control of Superparamagnetism (Patent P1450)...
- Magnetoelectric Control of Superparamagnetism Application Type: Utility Patent Number: 9355764 Country: United States Status: Filed on 14-Jan-2014, Issued on 31-May-2016, Patent ...
URL: https://www.src.org/library/patent/p1450/
Modified: 2016-05-31 - 25KB
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- 9:
Methods and Apparatus for Terahertz Wave Amplitude Modulation...
- Methods and Apparatus for Terahertz Wave Amplitude Modulation Application Type: Utility Patent Number: 8836446 Country: United States Status: Filed on 21-Jun-2012, Issued on ...
URL: https://www.src.org/library/patent/p1351/
Modified: 2014-09-16 - 21KB
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- 10:
Nanomagnetic Register (Patent P1124) - SRC
- Nanomagnetic Register Application Type: Utility Patent Number: 8138874 Country: United States Status: Filed on 20-Jul-2009, Issued on 20-Mar-2012, Patent Abandoned Organization: ...
URL: https://www.src.org/library/patent/p1124/
Modified: 2012-03-20 - 22KB
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- 11:
Spin Transfer Torque Triad for Non-Volatile Logic Gates (Patent...
- Spin Transfer Torque Triad for Non-Volatile Logic Gates Application Type: Utility Patent Number: 8198919 Country: United States Status: Filed on 23-Feb-2011, Issued on 12-Jun-2012, ...
URL: https://www.src.org/library/patent/p1241/
Modified: 2012-06-12 - 22KB
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- 12:
Non-Volatile Polarization Induced Strain Coupled 2D FET Memory...
- Non-Volatile Polarization Induced Strain Coupled 2D FET Memory Application Type: Utility Patent Number: 11296224 Country: United States Status: Filed on 16-Jun-2021, Issued on ...
URL: https://www.src.org/library/patent/p1960/
Modified: 2022-04-05 - 22KB
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- 13:
Tunneling Field-Effect Transistor with Low Leakage Current (Patent...
- Tunneling Field-Effect Transistor with Low Leakage Current Application Type: Utility Patent Number: 8309989 Country: United States Status: Filed on 18-Aug-2010, Issued on ...
URL: https://www.src.org/library/patent/p1210/
Modified: 2012-11-13 - 21KB
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- 14:
Incorporating Gate Control over a Resonant Tunneling Structure...
- Incorporating Gate Control over a Resonant Tunneling Structure in CMOS to Reduce off-State Current Leakage, Supply Voltage and Power Consumption Application Type: Utility Patent ...
URL: https://www.src.org/library/patent/p1098/
Modified: 2011-08-30 - 23KB
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