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- 1:
Non-Volatile Polarization Induced Strain Coupled 2D FET Memory...
- Non-Volatile Polarization Induced Strain Coupled 2D FET Memory Application Type: Utility Patent Number: 11296224 Country: United States Status: Filed on 16-Jun-2021, Issued on ...
URL: https://www.src.org/library/patent/p1960/
Modified: 2022-04-05 - 22KB
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- 2:
EXCEL Center at Notre Dame E2CDA-NRI Liaison Team Visit (Event...
- EXCEL Center at Notre Dame E2CDA-NRI Liaison Team Visit Date: Wednesday, May 31, 2017, 8 a.m. - Thursday, June 1, 2017, noon ET Location: via web conference and in person at ...
URL: https://www.src.org/calendar/e006221/
Modified: 2017-12-01 - 50KB
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- 3:
Semiconductor Research Corporation - SRC
- NRI NRI Nanoelectronics Research Initiative An Chen, NRI Executive Director Future generations of electronics will be based on new devices and circuit architectures, operating on ...
URL: https://www.src.org/program/nri/
Modified: 2023-10-10 - 31KB
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