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1 through 7 of 7 similar documents, best matches first.   
1: Bio - Priyadarshini Panda - SRC
Bio: Priyadarshini Panda Priyadarshini Panda Priyadarshini Panda is a Ph.D. student at Purdue University working with Prof. Kaushik Roy. She will be graduating in July 2019 and ...
URL: https://www.src.org/...ndar/e006797/priyadarshini-panda-bio/
Modified: 2019-05-07 - 19KB
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2: Bio - Kaushik Roy - SRC
Bio: Kaushik Roy Kaushik Roy Kaushik Roy received B.Tech. degree in electronics and electrical communications engineering from the Indian Institute of Technology, Kharagpur, India, ...
URL: https://www.src.org/calendar/e006797/kaushik-roy-bio/
Modified: 2019-05-07 - 20KB
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3: Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
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4: Patterning Electronic Devices using Reactive-Ion Etching of Tin...
Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
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5: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
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6: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
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7: Method of Forming Low-Resistivity RU ALD Through a BI-Layer Process...
Method of Forming Low-Resistivity RU ALD Through a BI-Layer Process and Related Structures Application Type: Utility Country: United States Status: Filed on 6-Dec-2022, Published ...
URL: https://www.src.org/library/patent/p2099/
Modified: 2022-12-06 - 23KB
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1 through 7 of 7 similar documents, best matches first.