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| 1 through 18 of
18 similar documents, best matches first. |
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- 1:
Tunneling Field-Effect Transistor with Low Leakage Current (Patent...
- Tunneling Field-Effect Transistor with Low Leakage Current Application Type: Utility Patent Number: 8309989 Country: United States Status: Filed on 18-Aug-2010, Issued on ...
URL: https://www.src.org/library/patent/p1210/
Modified: 2012-11-13 - 21KB
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- 2:
Incorporating Gate Control over a Resonant Tunneling Structure...
- Incorporating Gate Control over a Resonant Tunneling Structure in CMOS to Reduce off-State Current Leakage, Supply Voltage and Power Consumption Application Type: Utility Patent ...
URL: https://www.src.org/library/patent/p1098/
Modified: 2011-08-30 - 23KB
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- 3:
Low Voltage Tunnel Field-Effect Transistor (TFET) and Method...
- Low Voltage Tunnel Field-Effect Transistor (TFET) and Method of Making Same Application Type: Utility Patent Number: 8796733 Country: United States Status: Filed on 9-Aug-2011, ...
URL: https://www.src.org/library/patent/p1297/
Modified: 2014-08-05 - 23KB
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- 4:
Topological Insulator-Based Field-Effect Transistor (Patent P1271...
- Topological Insulator-Based Field-Effect Transistor Application Type: Utility Patent Number: 8629427 Country: United States Status: Filed on 29-Apr-2011, Issued on 14-Jan-2014, ...
URL: https://www.src.org/library/patent/p1271/
Modified: 2014-01-14 - 22KB
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- 5:
Bi-Layer Pseudo-Spin-Field-Effect Transistor (Patent P1174) ...
- Bi-Layer Pseudo-Spin-Field-Effect Transistor Application Type: Utility Patent Number: 8188460 Country: United States Status: Filed on 24-Nov-2009, Issued on 29-May-2012, Patent ...
URL: https://www.src.org/library/patent/p1174/
Modified: 2012-05-29 - 23KB
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- 6:
Bi-layer Pseudo-Spin Field-Effect Transistor (Patent P1347) ...
- Bi-layer Pseudo-Spin Field-Effect Transistor Application Type: Divisional Patent Number: 8263967 Country: United States Status: Filed on 1-May-2012, Issued on 11-Sep-2012, Patent ...
URL: https://www.src.org/library/patent/p1347/
Modified: 2012-09-11 - 23KB
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- 7:
Transistor That Employs Collective Magnetic Effects Thereby Providing...
- Transistor That Employs Collective Magnetic Effects Thereby Providing Improved Energy Efficiency Application Type: Utility Patent Number: 9825218 Country: United States Status: ...
URL: https://www.src.org/library/patent/p1535/
Modified: 2017-11-21 - 22KB
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- 8:
Magneto-Electric Voltage Controlled Spin Transistors (Patent...
- Magneto-Electric Voltage Controlled Spin Transistors Application Type: Utility Patent Number: 9379232 Country: United States Status: Filed on 18-Feb-2014, Issued on 28-Jun-2016 ...
URL: https://www.src.org/library/patent/p1469/
Modified: 2016-06-28 - 27KB
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- 9:
Spin Transistor Having Multiferroic Gate Dielectric (Patent P1282...
- Spin Transistor Having Multiferroic Gate Dielectric Application Type: Utility Patent Number: 8860006 Country: United States Status: Filed on 25-Mar-2011, Issued on 14-Oct-2014, ...
URL: https://www.src.org/library/patent/p1282/
Modified: 2014-10-14 - 23KB
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- 10:
Low Energy Magnetic Domain Wall Logic Device (Patent P1367) ...
- Low Energy Magnetic Domain Wall Logic Device Application Type: Utility Patent Number: 9208845 Country: United States Status: Filed on 14-Nov-2012, Issued on 8-Dec-2015, Patent ...
URL: https://www.src.org/library/patent/p1367/
Modified: 2015-12-08 - 23KB
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- 11:
Single Transistor RAM Using Ion Storage in 2D Crystals (Patent...
- Single Transistor RAM Using Ion Storage in 2D Crystals Application Type: Utility Patent Number: 9899480 Country: United States Status: Filed on 14-Mar-2014, Issued on 20-Feb-2018 ...
URL: https://www.src.org/library/patent/p1407/
Modified: 2018-02-20 - 21KB
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- 12:
Memory Device Based on Gate Controlled Ferromagnetism and Spin...
- Memory Device Based on Gate Controlled Ferromagnetism and Spin-Polarized Current Injection Application Type: Utility Patent Number: 9741416 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1609/
Modified: 2017-08-22 - 22KB
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- 13:
Methods of Forming Graphene Single Crystal Domains on a Low Nucleation...
- Methods of Forming Graphene Single Crystal Domains on a Low Nucleation Site Density Substrate Application Type: Utility Patent Number: 10072355 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p1436/
Modified: 2018-09-11 - 21KB
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- 14:
Magnetoelectric Computational Devices (Patent P1730) - SRC
- Magnetoelectric Computational Devices Application Type: Utility Patent Number: 9979401 Country: United States Status: Filed on 19-Jul-2017, Issued on 22-May-2018 Organization: ...
URL: https://www.src.org/library/patent/p1730/
Modified: 2018-05-22 - 25KB
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- 15:
Magnetoelectric Computational Devices (Patent P1789) - SRC
- Magnetoelectric Computational Devices Application Type: Divisional Patent Number: 10164641 Country: United States Status: Filed on 23-Apr-2018, Issued on 25-Dec-2018 Organization: ...
URL: https://www.src.org/library/patent/p1789/
Modified: 2018-12-25 - 25KB
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- 16:
Magnetoelectric Computational Devices (Patent P1790) - SRC
- Magnetoelectric Computational Devices Application Type: Divisional Patent Number: 10177769 Country: United States Status: Filed on 23-Apr-2018, Issued on 8-Jan-2019 Organization: ...
URL: https://www.src.org/library/patent/p1790/
Modified: 2019-01-08 - 25KB
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- 17:
High Efficency Grating Coupler Designs and Applications (Patent...
- High Efficency Grating Coupler Designs and Applications Application Type: Utility Country: United States Status: Filed on 12-Apr-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p1979/
Modified: 2022-04-12 - 22KB
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- 18:
Non-Volatile Polarization Induced Strain Coupled 2D FET Memory...
- Non-Volatile Polarization Induced Strain Coupled 2D FET Memory Application Type: Utility Patent Number: 11296224 Country: United States Status: Filed on 16-Jun-2021, Issued on ...
URL: https://www.src.org/library/patent/p1960/
Modified: 2022-04-05 - 22KB
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