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| 1 through 15 of
15 similar documents, best matches first. |
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- 1:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Divisional Patent Number: 6753567 Country: ...
URL: https://www.src.org/library/patent/p0375/
Modified: 2004-06-22 - 22KB
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- 2:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB
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- 3:
High Dielectric Constant Metal Silicates Formed By Controlled...
- High Dielectric Constant Metal Silicates Formed By Controlled Metal-Surface Reactions Application Type: Utility Patent Number: 6521911 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0270/
Modified: 2003-02-18 - 22KB
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- 4:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Utility Patent Number: 6552403 Country: United ...
URL: https://www.src.org/library/patent/p0095/
Modified: 2003-04-22 - 24KB
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- 5:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Divisional Patent Number: 6686264 Country: ...
URL: https://www.src.org/library/patent/p0374/
Modified: 2004-02-03 - 24KB
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- 6:
High/Low Work Function Metal Alloys for Integrated Circuit Electrodes...
- High/Low Work Function Metal Alloys for Integrated Circuit Electrodes and Methods of Fabricating Same Application Type: Utility Patent Number: 6873020 Country: United States ...
URL: https://www.src.org/library/patent/p0243/
Modified: 2005-03-29 - 22KB
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- 7:
Novel Non-Crystalline Oxides for Use in Microelectronic, Optical...
- Novel Non-Crystalline Oxides for Use in Microelectronic, Optical and Other Applications Application Type: Utility Patent Number: 6787861 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0225/
Modified: 2004-09-07 - 27KB
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- 8:
Methods for Removing Contaminants on a Substrate (Patent P0252...
- Methods for Removing Contaminants on a Substrate Application Type: Utility Patent Number: 6933235 Country: United States Status: Filed on 21-Nov-2002, Issued on 23-Aug-2005, Patent ...
URL: https://www.src.org/library/patent/p0252/
Modified: 2005-08-23 - 22KB
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- 9:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Foreign National Patent Number: NI180834 ...
URL: https://www.src.org/library/patent/p0220/
Modified: 2003-11-11 - 24KB
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- 10:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: Utility Patent Number: 5448513 Country: United States Status: Filed on 2-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0032/
Modified: 1995-09-05 - 25KB
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- 11:
Method for Testing and Diagnosing MOS Transistors (Patent P0188...
- Method for Testing and Diagnosing MOS Transistors Application Type: Utility Patent Number: 6275059 Country: United States Status: Filed on 4-Oct-1999, Issued on 14-Aug-2001, Patent ...
URL: https://www.src.org/library/patent/p0188/
Modified: 2001-08-14 - 22KB
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- 12:
Process for Forming Hafnium Oxide Films (Patent P0235) - SRC
- Process for Forming Hafnium Oxide Films Application Type: Utility Patent Number: 6683011 Country: United States Status: Filed on 14-Nov-2001, Issued on 27-Jan-2004, Patent Expired ...
URL: https://www.src.org/library/patent/p0235/
Modified: 2004-01-27 - 22KB
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- 13:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Divisional Patent Number: 7141858 Country: United States Status: Filed on 18-Jun-2004, ...
URL: https://www.src.org/library/patent/p0482/
Modified: 2006-11-28 - 22KB
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- 14:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Utility Patent Number: 6794234 Country: United States Status: Filed on 9-Dec-2002, Issued on ...
URL: https://www.src.org/library/patent/p0295/
Modified: 2004-09-21 - 22KB
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- 15:
Non-Crystalline Oxides for Use in Microelectronic, Optical and...
- Non-Crystalline Oxides for Use in Microelectronic, Optical and Other Applications Application Type: Foreign National Patent Number: 195870 Country: Taiwan Status: Filed on ...
URL: https://www.src.org/library/patent/p0227/
Modified: 2004-11-02 - 27KB
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