[x]
Thrust/Theme
Advanced Devices & Technologies
[x]
GRC Science Area
PID – Process Integration & Device Sciences
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4 similar documents, best matches first. |
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- 1:
Vertical Channel Floating Gate Transistor Having Silicon Germanium...
- Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB
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- 2:
Floating Gate Transistor Having Buried Strained Silicon Germanium...
- Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB
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- 3:
Bipolar Transistor Having Base Region With Coupled Delta Layers...
- Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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- 4:
Method of Fabricating Quantum Bridges by Selective Etching of...
- Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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