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- 1:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Utility Patent Number: 6552403 Country: United ...
URL: https://www.src.org/library/patent/p0095/
Modified: 2003-04-22 - 24KB
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- 2:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Foreign National Patent Number: NI180834 ...
URL: https://www.src.org/library/patent/p0220/
Modified: 2003-11-11 - 24KB
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- 3:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Divisional Patent Number: 6686264 Country: ...
URL: https://www.src.org/library/patent/p0374/
Modified: 2004-02-03 - 24KB
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- 4:
Method of Making an Ultra Thin Dielectric for Electronic Devices...
- Method of Making an Ultra Thin Dielectric for Electronic Devices Application Type: Utility Patent Number: 5478765 Country: United States Status: Filed on 4-May-1994, Issued on ...
URL: https://www.src.org/library/patent/p0028/
Modified: 1995-12-26 - 21KB
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- 5:
Method of Making MOS Transistor Having Improved Oxynitride Dielectric...
- Method of Making MOS Transistor Having Improved Oxynitride Dielectric Application Type: Utility Patent Number: 5397720 Country: United States Status: Filed on 7-Jan-1994, Issued on ...
URL: https://www.src.org/library/patent/p0042/
Modified: 1995-03-14 - 21KB
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- 6:
Ultra Thin Dielectric for Electronic Devices and Method of Making...
- Ultra Thin Dielectric for Electronic Devices and Method of Making Same Application Type: Divisional Patent Number: 5578848 Country: United States Status: Filed on 18-Sep-1995, ...
URL: https://www.src.org/library/patent/p0177/
Modified: 1996-11-26 - 21KB
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- 7:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB
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- 8:
Semiconductor Devices Having an Interfacial Dielectric Layer...
- Semiconductor Devices Having an Interfacial Dielectric Layer and Related Methods Application Type: Utility Patent Number: 7507629 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0450/
Modified: 2009-03-24 - 23KB
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- 9:
Ultrathin Nanoscale Membranes, Methods of Making, and Uses Thereof...
- Ultrathin Nanoscale Membranes, Methods of Making, and Uses Thereof Application Type: Utility Patent Number: 7922795 Country: United States Status: Filed on 1-May-2006, Issued on ...
URL: https://www.src.org/library/patent/p0629/
Modified: 2011-04-12 - 24KB
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- 10:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Divisional Patent Number: 6753567 Country: ...
URL: https://www.src.org/library/patent/p0375/
Modified: 2004-06-22 - 22KB
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- 11:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Foreign National Patent Number: NI154861 ...
URL: https://www.src.org/library/patent/p0580/
Modified: 2008-12-01 - 22KB
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- 12:
Multi-Layered Attenuated Phase Shift Mask and a Method for Making...
- Multi-Layered Attenuated Phase Shift Mask and a Method for Making the Mask Application Type: Utility Patent Number: 5939227 Country: United States Status: Filed on 9-Mar-1998, ...
URL: https://www.src.org/library/patent/p0052/
Modified: 1999-08-17 - 30KB
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- 13:
Oxidizing Methods for Making Low Resistance Source/Drain Germanium...
- Oxidizing Methods for Making Low Resistance Source/Drain Germanium Contacts Application Type: Utility Patent Number: 5516724 Country: United States Status: Filed on 30-Nov-1994, ...
URL: https://www.src.org/library/patent/p0023/
Modified: 1996-05-14 - 22KB
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- 14:
Methods of Determining Operating Conditions of Silicon Carbide...
- Methods of Determining Operating Conditions of Silicon Carbide Power MOSFET Devices Associated with Aging, Related Circuits and Computer Program Products Application Type: Utility ...
URL: https://www.src.org/library/patent/p1861/
Modified: 2022-10-18 - 23KB
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- 15:
Methods of Measuring Real-Time Junction Temperature in Silicon...
- Methods of Measuring Real-Time Junction Temperature in Silicon Carbide Power MOSFET Devices using Turn-on Delay, Related Circuits, and Computer Program Products Application Type: ...
URL: https://www.src.org/library/patent/p1917/
Modified: 2022-12-13 - 22KB
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- 16:
Ultrathin Membranes and Hollow Three Dimensional Structures,...
- Ultrathin Membranes and Hollow Three Dimensional Structures, and Uses Thereof Application Type: Patent Cooperation Treaty Patent Number: PCT Status: Filed on 1-May-2006, Issued on ...
URL: https://www.src.org/library/patent/p0518/
Modified: 2011-04-12 - 24KB
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