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GRC Science Area
NIS – Nanostructure & Integration Sciences
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1 through 8 of
8 similar documents, best matches first. |
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- 1:
Submicron MOSFET having Asymmetric Channel Profile (Patent P0303...
- Submicron MOSFET having Asymmetric Channel Profile Application Type: Utility Patent Number: 6744083 Country: United States Status: Filed on 1-Oct-2002, Issued on 1-Jun-2004 ...
URL: https://www.src.org/library/patent/p0303/
Modified: 2004-06-01 - 22KB Find Similar Documents
- 2:
Vertical Channel Floating Gate Transistor Having Silicon Germanium...
- Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB Find Similar Documents
- 3:
Floating Gate Transistor Having Buried Strained Silicon Germanium...
- Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB Find Similar Documents
- 4:
High Mobility Heterojunction Transistor and Method (Patent P0208...
- High Mobility Heterojunction Transistor and Method Application Type: Foreign National Patent Number: NI179065 Country: Taiwan Status: Filed on 24-May-2001, Issued on 6-Nov-2003 ...
URL: https://www.src.org/library/patent/p0208/
Modified: 2003-11-06 - 24KB Find Similar Documents
- 5:
High Mobility Heterojunction Transistor and Method (Patent P0083...
- High Mobility Heterojunction Transistor and Method Application Type: Utility Patent Number: 6319799 Country: United States Status: Filed on 9-May-2000, Issued on 20-Nov-2001 ...
URL: https://www.src.org/library/patent/p0083/
Modified: 2001-11-20 - 24KB Find Similar Documents
- 6:
P-I-N MOSFET for ULSI Applications (Patent P0037) - SRC
- P-I-N MOSFET for ULSI Applications Application Type: Utility Patent Number: 5432366 Country: United States Status: Filed on 8-May-1993, Issued on 11-Jul-1995, Patent Expired ...
URL: https://www.src.org/library/patent/p0037/
Modified: 1995-07-11 - 21KB Find Similar Documents
- 7:
Bipolar Transistor Having Base Region With Coupled Delta Layers...
- Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB Find Similar Documents
- 8:
Method of Fabricating Quantum Bridges by Selective Etching of...
- Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB Find Similar Documents
1 through 8 of
8 similar documents, best matches first. |
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