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Advanced Devices & Technologies

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NIS – Nanostructure & Integratio... 7
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1 through 7 of 7 similar documents, best matches first.   
1: Submicron MOSFET having Asymmetric Channel Profile (Patent P0303...
Submicron MOSFET having Asymmetric Channel Profile Application Type: Utility Patent Number: 6744083 Country: United States Status: Filed on 1-Oct-2002, Issued on 1-Jun-2004 ...
URL: https://www.src.org/library/patent/p0303/
Modified: 2004-06-01 - 22KB
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2: Vertical Channel Floating Gate Transistor Having Silicon Germanium...
Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB
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3: Floating Gate Transistor Having Buried Strained Silicon Germanium...
Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB
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4: High Mobility Heterojunction Transistor and Method (Patent P0208...
High Mobility Heterojunction Transistor and Method Application Type: Foreign National Patent Number: NI179065 Country: Taiwan Status: Filed on 24-May-2001, Issued on 6-Nov-2003 ...
URL: https://www.src.org/library/patent/p0208/
Modified: 2003-11-06 - 24KB
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5: High Mobility Heterojunction Transistor and Method (Patent P0083...
High Mobility Heterojunction Transistor and Method Application Type: Utility Patent Number: 6319799 Country: United States Status: Filed on 9-May-2000, Issued on 20-Nov-2001 ...
URL: https://www.src.org/library/patent/p0083/
Modified: 2001-11-20 - 24KB
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6: Bipolar Transistor Having Base Region With Coupled Delta Layers...
Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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7: Method of Fabricating Quantum Bridges by Selective Etching of...
Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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1 through 7 of 7 similar documents, best matches first.