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Advanced Devices & Technologies
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- 1:
High Mobility Heterojunction Transistor and Method (Patent P0208...
- High Mobility Heterojunction Transistor and Method Application Type: Foreign National Patent Number: NI179065 Country: Taiwan Status: Filed on 24-May-2001, Issued on 6-Nov-2003 ...
URL: https://www.src.org/library/patent/p0208/
Modified: 2003-11-06 - 24KB
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- 2:
High Mobility Heterojunction Transistor and Method (Patent P0083...
- High Mobility Heterojunction Transistor and Method Application Type: Utility Patent Number: 6319799 Country: United States Status: Filed on 9-May-2000, Issued on 20-Nov-2001 ...
URL: https://www.src.org/library/patent/p0083/
Modified: 2001-11-20 - 24KB
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- 3:
Floating Gate Transistor Having Buried Strained Silicon Germanium...
- Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB
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- 4:
Vertical Channel Floating Gate Transistor Having Silicon Germanium...
- Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB
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- 5:
Submicron MOSFET having Asymmetric Channel Profile (Patent P0303...
- Submicron MOSFET having Asymmetric Channel Profile Application Type: Utility Patent Number: 6744083 Country: United States Status: Filed on 1-Oct-2002, Issued on 1-Jun-2004 ...
URL: https://www.src.org/library/patent/p0303/
Modified: 2004-06-01 - 22KB
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- 6:
Method for Fabricating a Triple Self-Aligned Bipolar Junction...
- Method for Fabricating a Triple Self-Aligned Bipolar Junction Transistor Application Type: Divisional Patent Number: 5434092 Country: United States Status: Filed on 4-Jan-1994, ...
URL: https://www.src.org/library/patent/p0036/
Modified: 1995-07-18 - 22KB
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- 7:
Bipolar Transistor Having Base Region With Coupled Delta Layers...
- Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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- 8:
Method of Fabricating Quantum Bridges by Selective Etching of...
- Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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- 9:
Methods of Forming Nano-Scale Electronic and Optoelectronic Devices...
- Methods of Forming Nano-Scale Electronic and Optoelectronic Devices Using Non-Photolithographically Defined Nano-Channel Templates Application Type: Utility Patent Number: 6709929 ...
URL: https://www.src.org/library/patent/p0301/
Modified: 2004-03-23 - 25KB
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- 10:
Optoelectronic Devices Having Arrays of Quantum Dot Compound...
- Optoelectronic Devices Having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 7265375 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0553/
Modified: 2007-09-04 - 25KB
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- 11:
Optoelectronic Devices having Arrays of Quantum Dot Compound...
- Optoelectronic Devices having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 6914256 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0443/
Modified: 2005-07-05 - 25KB
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