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Advanced Devices & Technologies	14
DCMOS – Digital CMOS Technologie...	2
MT – Memory Technologies	1
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1 through 30 of 30 similar documents, best matches first.

1: Triple Self-Aligned Bipolar Junction Transistor (Patent P0078...: Triple Self-Aligned Bipolar Junction Transistor Application Type: Utility Patent Number: 5286996 Country: United States Status: Filed on 31-Dec-1991, Issued on 15-Feb-1994, Patent ...
URL: https://www.src.org/library/patent/p0078/
Modified: 1994-02-15 - 21KB
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2: Triple Self-Aligned Bipolar Junction Transistor (Patent P0045...: Triple Self-Aligned Bipolar Junction Transistor Application Type: Continuation (in part) Patent Number: 5382828 Country: United States Status: Filed on 4-Jan-1994, Issued on ...
URL: https://www.src.org/library/patent/p0045/
Modified: 1995-01-17 - 21KB
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3: Method for Fabricating a Triple Self-Aligned Bipolar Junction...: Method for Fabricating a Triple Self-Aligned Bipolar Junction Transistor Application Type: Divisional Patent Number: 5434092 Country: United States Status: Filed on 4-Jan-1994, ...
URL: https://www.src.org/library/patent/p0036/
Modified: 1995-07-18 - 22KB
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4: Self-aligned Integrated Circuit Bipolar Transistor having Monocrystall...: Self-aligned Integrated Circuit Bipolar Transistor having Monocrystalline Contacts Application Type: Utility Patent Number: 5134454 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0150/
Modified: 1992-07-28 - 21KB
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5: Self-Aligned Integrated Circuit Bipolar Transistor having Monocrystall...: Self-Aligned Integrated Circuit Bipolar Transistor having Monocrystalline Contacts Application Type: Utility Patent Number: 5118634 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0151/
Modified: 1992-06-02 - 21KB
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6: Bipolar Transistor by Selective and Lateral Epitaxial Overgrowth...: Bipolar Transistor by Selective and Lateral Epitaxial Overgrowth Application Type: Utility Patent Number: 4829016 Country: United States Status: Filed on 19-Oct-1987, Issued on ...
URL: https://www.src.org/library/patent/p0120/
Modified: 1989-05-09 - 22KB
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7: Bipolar Transistor Having Base Region With Coupled Delta Layers...: Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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8: Dual-Gated Semiconductor-On-Insulator Field Effect Transistor...: Dual-Gated Semiconductor-On-Insulator Field Effect Transistor Application Type: Divisional Patent Number: 5349228 Country: United States Status: Filed on 7-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0062/
Modified: 1994-09-20 - 21KB
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9: Self-Welded Metal-Catalyzed Carbon Nanotube Bridges and Solid...: Self-Welded Metal-Catalyzed Carbon Nanotube Bridges and Solid Electrolytic Non-Volatile Memories Application Type: Utility Patent Number: 7640226 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0657/
Modified: 2009-12-29 - 23KB
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10: Methods for Fabricating a Dual-Gated Semiconductor-On-Insulator...: Methods for Fabricating a Dual-Gated Semiconductor-On-Insulator Field Effect Transistor Application Type: Utility Patent Number: 5273921 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0079/
Modified: 1993-12-28 - 21KB
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11: Methods of Fabricating Strained Semiconductor-On-Insulator Field...: Methods of Fabricating Strained Semiconductor-On-Insulator Field-Effect Transistors And Related Devices Application Type: Utility Patent Number: 7211458 Country: United States ...
URL: https://www.src.org/library/patent/p0523/
Modified: 2007-05-01 - 22KB
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12: High Mobility Heterojunction Transistor and Method (Patent P0083...: High Mobility Heterojunction Transistor and Method Application Type: Utility Patent Number: 6319799 Country: United States Status: Filed on 9-May-2000, Issued on 20-Nov-2001 ...
URL: https://www.src.org/library/patent/p0083/
Modified: 2001-11-20 - 24KB
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13: Double Heterojunction Inversion Base Transistor (Patent P0121...: Double Heterojunction Inversion Base Transistor Application Type: None Patent Number: 4825269 Country: United States Status: Filed on 4-Mar-1988, Issued on 25-Apr-1989, Patent ...
URL: https://www.src.org/library/patent/p0121/
Modified: 1989-04-25 - 21KB
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14: Composite Thermal Interface Material Including Aligned Nanofibers...: Composite Thermal Interface Material Including Aligned Nanofibers with Low Melting Temperature Binder Application Type: Utility Patent Number: 8389119 Country: United States ...
URL: https://www.src.org/library/patent/p1023/
Modified: 2013-03-05 - 25KB
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15: Vertical Gate-Depleted Single Electron Transistors (Patent P0320...: Vertical Gate-Depleted Single Electron Transistors Application Type: Utility Patent Number: 7547932 Country: United States Status: Filed on 22-Nov-2002, Issued on 16-Jun-2009, ...
URL: https://www.src.org/library/patent/p0320/
Modified: 2009-06-16 - 22KB
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16: Static RAM Memory Cell Using N-Channel MOS Transistors (Patent...: Static RAM Memory Cell Using N-Channel MOS Transistors Application Type: Utility Patent Number: 5051951 Country: United States Status: Filed on 8-Feb-1991, Issued on 24-Sep-1991, ...
URL: https://www.src.org/library/patent/p0105/
Modified: 1991-09-24 - 21KB
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17: Complementary Field Effect Transistors Having Strained Superlattice...: Complementary Field Effect Transistors Having Strained Superlattice Structure Application Type: Utility Patent Number: 5155571 Country: United States Status: Filed on 6-Aug-1990, ...
URL: https://www.src.org/library/patent/p0163/
Modified: 1992-10-13 - 21KB
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18: Floating Gate Transistor Having Buried Strained Silicon Germanium...: Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB
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19: Method of Making MOS Transistor Having Improved Oxynitride Dielectric...: Method of Making MOS Transistor Having Improved Oxynitride Dielectric Application Type: Utility Patent Number: 5397720 Country: United States Status: Filed on 7-Jan-1994, Issued on ...
URL: https://www.src.org/library/patent/p0042/
Modified: 1995-03-14 - 21KB
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20: Method of Shallow Junction Formation in Semiconductor Devices...: Method of Shallow Junction Formation in Semiconductor Devices Using Gas Immersion Laser Doping Application Type: Utility Patent Number: 5316969 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p0069/
Modified: 1994-05-31 - 21KB
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21: Complementary Field-Effect Transistors Having Enhanced Performance...: Complementary Field-Effect Transistors Having Enhanced Performance With a Single Capping Layer Application Type: Utility Patent Number: 7649230 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p0559/
Modified: 2010-01-19 - 22KB
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22: Vertical Channel Floating Gate Transistor Having Silicon Germanium...: Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB
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23: Semiconductor-On-Insulator Electronic Devices Having Trench Isolated...: Semiconductor-On-Insulator Electronic Devices Having Trench Isolated Monocrystalline Active Regions Application Type: Utility Patent Number: 5481126 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0027/
Modified: 1996-01-02 - 22KB
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24: Method of Forming Single Crystalline Electrical Isolated Wells...: Method of Forming Single Crystalline Electrical Isolated Wells Application Type: Utility Patent Number: 5422299 Country: United States Status: Filed on 4-Jan-1993, Issued on ...
URL: https://www.src.org/library/patent/p0039/
Modified: 1995-06-06 - 21KB
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25: Method of Forming Semiconductor-On-Insulator Electronic Devices...: Method of Forming Semiconductor-On-Insulator Electronic Devices by Growing Monocrystalline Semiconducting Regions from Trench Sidewalls Application Type: Utility Patent Number: ...
URL: https://www.src.org/library/patent/p0025/
Modified: 1996-02-27 - 22KB
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26: SRAM Cell Utilizing Bistable Diode Having GESI Structure Therein...: SRAM Cell Utilizing Bistable Diode Having GESI Structure Therein Application Type: Utility Patent Number: 5684737 Country: United States Status: Filed on 8-Dec-1995, Issued on ...
URL: https://www.src.org/library/patent/p0057/
Modified: 1997-11-04 - 25KB
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27: Method of Fabricating Quantum Bridges by Selective Etching of...: Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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28: Optoelectronic Devices Having Arrays of Quantum Dot Compound...: Optoelectronic Devices Having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 7265375 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0553/
Modified: 2007-09-04 - 25KB
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29: Optoelectronic Devices having Arrays of Quantum Dot Compound...: Optoelectronic Devices having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 6914256 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0443/
Modified: 2005-07-05 - 25KB
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30: Methods of Forming Nano-Scale Electronic and Optoelectronic Devices...: Methods of Forming Nano-Scale Electronic and Optoelectronic Devices Using Non-Photolithographically Defined Nano-Channel Templates Application Type: Utility Patent Number: 6709929 ...
URL: https://www.src.org/library/patent/p0301/
Modified: 2004-03-23 - 25KB
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1 through 30 of 30 similar documents, best matches first.