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GRC Science Area
NIS – Nanostructure & Integration Sciences
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| 1 through 16 of
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- 1:
Method for Fabricating a Triple Self-Aligned Bipolar Junction...
- Method for Fabricating a Triple Self-Aligned Bipolar Junction Transistor Application Type: Divisional Patent Number: 5434092 Country: United States Status: Filed on 4-Jan-1994, ...
URL: https://www.src.org/library/patent/p0036/
Modified: 1995-07-18 - 22KB
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- 2:
Bipolar Transistor by Selective and Lateral Epitaxial Overgrowth...
- Bipolar Transistor by Selective and Lateral Epitaxial Overgrowth Application Type: Utility Patent Number: 4829016 Country: United States Status: Filed on 19-Oct-1987, Issued on ...
URL: https://www.src.org/library/patent/p0120/
Modified: 1989-05-09 - 22KB
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- 3:
Semiconductor-On-Insulator Electronic Devices Having Trench Isolated...
- Semiconductor-On-Insulator Electronic Devices Having Trench Isolated Monocrystalline Active Regions Application Type: Utility Patent Number: 5481126 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0027/
Modified: 1996-01-02 - 22KB
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- 4:
Method of Forming Semiconductor-On-Insulator Electronic Devices...
- Method of Forming Semiconductor-On-Insulator Electronic Devices by Growing Monocrystalline Semiconducting Regions from Trench Sidewalls Application Type: Utility Patent Number: ...
URL: https://www.src.org/library/patent/p0025/
Modified: 1996-02-27 - 22KB
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- 5:
Triple Self-Aligned Bipolar Junction Transistor (Patent P0078...
- Triple Self-Aligned Bipolar Junction Transistor Application Type: Utility Patent Number: 5286996 Country: United States Status: Filed on 31-Dec-1991, Issued on 15-Feb-1994, Patent ...
URL: https://www.src.org/library/patent/p0078/
Modified: 1994-02-15 - 21KB
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- 6:
Triple Self-Aligned Bipolar Junction Transistor (Patent P0045...
- Triple Self-Aligned Bipolar Junction Transistor Application Type: Continuation (in part) Patent Number: 5382828 Country: United States Status: Filed on 4-Jan-1994, Issued on ...
URL: https://www.src.org/library/patent/p0045/
Modified: 1995-01-17 - 21KB
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- 7:
Self-aligned Integrated Circuit Bipolar Transistor having Monocrystall...
- Self-aligned Integrated Circuit Bipolar Transistor having Monocrystalline Contacts Application Type: Utility Patent Number: 5134454 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0150/
Modified: 1992-07-28 - 21KB
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- 8:
Self-Aligned Integrated Circuit Bipolar Transistor having Monocrystall...
- Self-Aligned Integrated Circuit Bipolar Transistor having Monocrystalline Contacts Application Type: Utility Patent Number: 5118634 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0151/
Modified: 1992-06-02 - 21KB
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- 9:
Dual-Gated Semiconductor-On-Insulator Field Effect Transistor...
- Dual-Gated Semiconductor-On-Insulator Field Effect Transistor Application Type: Divisional Patent Number: 5349228 Country: United States Status: Filed on 7-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0062/
Modified: 1994-09-20 - 21KB
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- 10:
Methods for Fabricating a Dual-Gated Semiconductor-On-Insulator...
- Methods for Fabricating a Dual-Gated Semiconductor-On-Insulator Field Effect Transistor Application Type: Utility Patent Number: 5273921 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0079/
Modified: 1993-12-28 - 21KB
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- 11:
Bipolar Transistor Having Base Region With Coupled Delta Layers...
- Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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- 12:
Method of Forming Single Crystalline Electrical Isolated Wells...
- Method of Forming Single Crystalline Electrical Isolated Wells Application Type: Utility Patent Number: 5422299 Country: United States Status: Filed on 4-Jan-1993, Issued on ...
URL: https://www.src.org/library/patent/p0039/
Modified: 1995-06-06 - 21KB
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- 13:
Methods of Fabricating Strained Semiconductor-On-Insulator Field...
- Methods of Fabricating Strained Semiconductor-On-Insulator Field-Effect Transistors And Related Devices Application Type: Utility Patent Number: 7211458 Country: United States ...
URL: https://www.src.org/library/patent/p0523/
Modified: 2007-05-01 - 22KB
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- 14:
Method of Fabricating Quantum Bridges by Selective Etching of...
- Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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- 15:
Floating Gate Transistor Having Buried Strained Silicon Germanium...
- Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB
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- 16:
Vertical Channel Floating Gate Transistor Having Silicon Germanium...
- Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB
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