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Thrust/Theme
Advanced Devices & Technologies
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- 1:
Method for Fabricating a Triple Self-Aligned Bipolar Junction...
- Method for Fabricating a Triple Self-Aligned Bipolar Junction Transistor Application Type: Divisional Patent Number: 5434092 Country: United States Status: Filed on 4-Jan-1994, ...
URL: https://www.src.org/library/patent/p0036/
Modified: 1995-07-18 - 22KB
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- 2:
Bipolar Transistor by Selective and Lateral Epitaxial Overgrowth...
- Bipolar Transistor by Selective and Lateral Epitaxial Overgrowth Application Type: Utility Patent Number: 4829016 Country: United States Status: Filed on 19-Oct-1987, Issued on ...
URL: https://www.src.org/library/patent/p0120/
Modified: 1989-05-09 - 22KB
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- 3:
Semiconductor-On-Insulator Electronic Devices Having Trench Isolated...
- Semiconductor-On-Insulator Electronic Devices Having Trench Isolated Monocrystalline Active Regions Application Type: Utility Patent Number: 5481126 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0027/
Modified: 1996-01-02 - 22KB
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- 4:
Method of Forming Semiconductor-On-Insulator Electronic Devices...
- Method of Forming Semiconductor-On-Insulator Electronic Devices by Growing Monocrystalline Semiconducting Regions from Trench Sidewalls Application Type: Utility Patent Number: ...
URL: https://www.src.org/library/patent/p0025/
Modified: 1996-02-27 - 22KB
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- 5:
Bipolar Transistor Having Base Region With Coupled Delta Layers...
- Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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- 6:
Method of Fabricating Quantum Bridges by Selective Etching of...
- Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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- 7:
Floating Gate Transistor Having Buried Strained Silicon Germanium...
- Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB
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- 8:
Vertical Channel Floating Gate Transistor Having Silicon Germanium...
- Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB
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