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1 through 26 of 26 similar documents, best matches first.

1: Hot-Carrier Suppressed Sub-Micron MOSFET Device (Patent P0113...: Hot-Carrier Suppressed Sub-Micron MOSFET Device Application Type: Utility Patent Number: 5012306 Country: United States Status: Filed on 22-Sep-1989, Issued on 30-Apr-1991, Patent ...
URL: https://www.src.org/library/patent/p0113/
Modified: 1991-04-30 - 21KB
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2: Hot-Carrier Suppressed Sub-Micron MOSFET Device (Patent P0257...: Hot-Carrier Suppressed Sub-Micron MOSFET Device Application Type: European Patent Office Patent Number: 0493520 Status: Filed on 19-Sep-1990, Issued on 14-Jun-1995, Patent Expired ...
URL: https://www.src.org/library/patent/p0257/
Modified: 1995-06-14 - 20KB
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3: Method for Forming Hot-Carrier Suppressed Sub-Micron Misfet Device...: Method for Forming Hot-Carrier Suppressed Sub-Micron Misfet Device Application Type: Utility Patent Number: 5093275 Country: United States Status: Filed on 14-Feb-1991, Issued on ...
URL: https://www.src.org/library/patent/p0100/
Modified: 1992-03-03 - 21KB
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4: Bipolar Transistor Having Base Region With Coupled Delta Layers...: Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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5: Method of Fabricating Quantum Bridges by Selective Etching of...: Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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6: Submicron MOSFET having Asymmetric Channel Profile (Patent P0303...: Submicron MOSFET having Asymmetric Channel Profile Application Type: Utility Patent Number: 6744083 Country: United States Status: Filed on 1-Oct-2002, Issued on 1-Jun-2004 ...
URL: https://www.src.org/library/patent/p0303/
Modified: 2004-06-01 - 22KB
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7: Clover Design Lateral Effect Position-Sensitive Device (Patent...: Clover Design Lateral Effect Position-Sensitive Device Application Type: Utility Patent Number: 4887140 Country: United States Status: Filed on 27-Apr-1989, Issued on 12-Dec-1989, ...
URL: https://www.src.org/library/patent/p0117/
Modified: 1989-12-12 - 20KB
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8: P-I-N MOSFET for ULSI Applications (Patent P0037) - SRC: P-I-N MOSFET for ULSI Applications Application Type: Utility Patent Number: 5432366 Country: United States Status: Filed on 8-May-1993, Issued on 11-Jul-1995, Patent Expired ...
URL: https://www.src.org/library/patent/p0037/
Modified: 1995-07-11 - 21KB
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9: Delta Doped and Counter Doped Dynamic Threshold Voltage MOSFET...: Delta Doped and Counter Doped Dynamic Threshold Voltage MOSFET for Ultra-Low Voltage Operation Application Type: Utility Patent Number: 5780899 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p0016/
Modified: 1998-07-14 - 22KB
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10: Bipolar Transistor by Selective and Lateral Epitaxial Overgrowth...: Bipolar Transistor by Selective and Lateral Epitaxial Overgrowth Application Type: Utility Patent Number: 4829016 Country: United States Status: Filed on 19-Oct-1987, Issued on ...
URL: https://www.src.org/library/patent/p0120/
Modified: 1989-05-09 - 22KB
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11: Charge Monitoring Device for Use in Semiconductor Wafer Fabrication...: Charge Monitoring Device for Use in Semiconductor Wafer Fabrication for Unipolar Operation and Charge Monitoring Application Type: Utility Patent Number: 5315145 Country: United ...
URL: https://www.src.org/library/patent/p0162/
Modified: 1994-05-24 - 21KB
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12: Methods of Fabricating Strained Semiconductor-On-Insulator Field...: Methods of Fabricating Strained Semiconductor-On-Insulator Field-Effect Transistors And Related Devices Application Type: Utility Patent Number: 7211458 Country: United States ...
URL: https://www.src.org/library/patent/p0523/
Modified: 2007-05-01 - 22KB
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13: Method for Fabricating a Triple Self-Aligned Bipolar Junction...: Method for Fabricating a Triple Self-Aligned Bipolar Junction Transistor Application Type: Divisional Patent Number: 5434092 Country: United States Status: Filed on 4-Jan-1994, ...
URL: https://www.src.org/library/patent/p0036/
Modified: 1995-07-18 - 22KB
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14: Semiconductor-On-Insulator Electronic Devices Having Trench Isolated...: Semiconductor-On-Insulator Electronic Devices Having Trench Isolated Monocrystalline Active Regions Application Type: Utility Patent Number: 5481126 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0027/
Modified: 1996-01-02 - 22KB
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15: Optoelectronic Devices Having Arrays of Quantum Dot Compound...: Optoelectronic Devices Having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 7265375 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0553/
Modified: 2007-09-04 - 25KB
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16: Optoelectronic Devices having Arrays of Quantum Dot Compound...: Optoelectronic Devices having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 6914256 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0443/
Modified: 2005-07-05 - 25KB
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17: Methods of Forming Nano-Scale Electronic and Optoelectronic Devices...: Methods of Forming Nano-Scale Electronic and Optoelectronic Devices Using Non-Photolithographically Defined Nano-Channel Templates Application Type: Utility Patent Number: 6709929 ...
URL: https://www.src.org/library/patent/p0301/
Modified: 2004-03-23 - 25KB
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18: Method of Forming Semiconductor-On-Insulator Electronic Devices...: Method of Forming Semiconductor-On-Insulator Electronic Devices by Growing Monocrystalline Semiconducting Regions from Trench Sidewalls Application Type: Utility Patent Number: ...
URL: https://www.src.org/library/patent/p0025/
Modified: 1996-02-27 - 22KB
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19: Floating Gate Transistor Having Buried Strained Silicon Germanium...: Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB
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20: Quantum Bridges Fabricated by Selective Etching of Superlattice...: Quantum Bridges Fabricated by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5539214 Country: United States Status: Filed on 6-Feb-1995, ...
URL: https://www.src.org/library/patent/p0010/
Modified: 1996-07-23 - 22KB
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21: High Mobility Heterojunction Transistor and Method (Patent P0208...: High Mobility Heterojunction Transistor and Method Application Type: Foreign National Patent Number: NI179065 Country: Taiwan Status: Filed on 24-May-2001, Issued on 6-Nov-2003 ...
URL: https://www.src.org/library/patent/p0208/
Modified: 2003-11-06 - 24KB
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22: High Mobility Heterojunction Transistor and Method (Patent P0083...: High Mobility Heterojunction Transistor and Method Application Type: Utility Patent Number: 6319799 Country: United States Status: Filed on 9-May-2000, Issued on 20-Nov-2001 ...
URL: https://www.src.org/library/patent/p0083/
Modified: 2001-11-20 - 24KB
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23: Optoelectronic Integrated Circuits Having Polycrystalline Silicon...: Optoelectronic Integrated Circuits Having Polycrystalline Silicon Waveguides Therein Application Type: Divisional Patent Number: 6108464 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0094/
Modified: 2000-08-22 - 26KB
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24: SRAM Cell Utilizing Bistable Diode Having GESI Structure Therein...: SRAM Cell Utilizing Bistable Diode Having GESI Structure Therein Application Type: Utility Patent Number: 5684737 Country: United States Status: Filed on 8-Dec-1995, Issued on ...
URL: https://www.src.org/library/patent/p0057/
Modified: 1997-11-04 - 25KB
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25: Vertical Channel Floating Gate Transistor Having Silicon Germanium...: Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB
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26: Methods of Forming Features of Integrated Circuits Using Modified...: Methods of Forming Features of Integrated Circuits Using Modified Buried Layers and Integrated Circuits Having Features so Formed Application Type: Utility Patent Number: 6346446 ...
URL: https://www.src.org/library/patent/p0190/
Modified: 2002-02-12 - 22KB
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1 through 26 of 26 similar documents, best matches first.